Enhancement-Mode Gallium Nitride Technology TECHNOLOGY BRIEF
2021-11-27
●A GaN transistor is a wide bandgap device with superior conductivity compared to traditional silicon transistors resulting in smaller devices and lower capacitance for the same RDS(on). Enhancement-mode (normally-off) operation allows power designers to take advantage of the performance benefits of gallium nitride in a switching application.Capacitance and inductance impede switching speed. eGaN FETs’ small size and lateral structure give ultra low capacitance while the chip-scale packaging gives low inductance enabling unprecedented switching performance in terms of speed, voltage overshoot and ringing. Zero QRR also reduces losses at high frequency.The switching performance of eGaN FETs and ICs enables higher power density, higher frequency, higher switching precision, higher bus voltage, and less voltage overhead. The technology can be scaled over many power and voltage levels.
●Advantages of GaN FETs and ICs vs. silicon in your power designs:
■Faster switching speed
■Smaller size
■Higher efficiency
■Lower costAEC-Q101 Qualified
●GaN Enables New Capabilities:
■Lower on resistance – lower conductance losses
■Faster devices – less switching losses and no reverse recovery
■Less capacitance – less losses when charging and discharging devices
■Less power needed to drive the circuit
■Smaller devices take up less space on the printed circuit board
■ Lower cost
●GaN is Cost Effective:
■ GaN on silicon – inexpensive substrate
■ Built in existing CMOS fab – mature, low cost process
■ Lowers system cost – smaller and fewer passive components
●GaN is Easy To Use
■ Works like an N-channel MOSFET only MUCH faster
■ Integration – saves space, improves efficiency, simplifies design, AND lowers cost.
■ Comprehensive design support – device models, application notes, demo boards, technical articles
●Advantages of GaN FETs and ICs vs. silicon in your power designs:
■Faster switching speed
■Smaller size
■Higher efficiency
■Lower costAEC-Q101 Qualified
●GaN Enables New Capabilities:
■Lower on resistance – lower conductance losses
■Faster devices – less switching losses and no reverse recovery
■Less capacitance – less losses when charging and discharging devices
■Less power needed to drive the circuit
■Smaller devices take up less space on the printed circuit board
■ Lower cost
●GaN is Cost Effective:
■ GaN on silicon – inexpensive substrate
■ Built in existing CMOS fab – mature, low cost process
■ Lowers system cost – smaller and fewer passive components
●GaN is Easy To Use
■ Works like an N-channel MOSFET only MUCH faster
■ Integration – saves space, improves efficiency, simplifies design, AND lowers cost.
■ Comprehensive design support – device models, application notes, demo boards, technical articles
- +1 Like
- Add to Favorites
Recommend
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
