UF3SC065040D8S 650V-45mΩ SiC FET
■The UF3SC065040D8S is now end-of-life and not recommended for
new designs. The UF3SC065040B7S is recommended as a replacement.
This SiC FET device is based on a unique 'cascode' circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off sic FET device. The device's standard gate-drive characteristics allows for a true“drop-in replacement" to Si IGBTs, Si FETs, SiC MOSFETsor Si superjunction devices. Available in the DFN8X8-4L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads，and any application requiring standard gate drive.
●Features
■Typical on-resistance R-DS(on),typ of 45mΩ
■Maximum operating temperature of 150°C
■Excellent reverse recovery
■Low gate charge
■Low intrinsic capacitance
■ESD protected, HBM class H2 (2000V to 4000V), CDM class C3 (> 1000V)
■DFN8X8-4L package for faster switching, clean gate waveforms
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[ EV charging ][ PV inverters ][ Switch mode power supplies ][ Power factor correction modules ][ Motor drives ][ Induction heating ] |
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Datasheet |
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Please see the document for details |
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DFN8X8-4L |
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English Chinese Chinese and English Japanese |
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September 2021 |
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Rev. OBS |
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925 KB |
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