APTM50DHM38G Asymmetrical - bridge MOSFET Power Module

2021-10-26
●V-DSS = 500V
●R-DSon = 38mΩ typ @ Tj = 25°C
●I-D = 90A @ Tc = 25°C
●Features:
■Power MOS 7® MOSFETs
▲Low R-DSon
▲Low input and Miller capacitance
▲Low gate charge
▲Avalanche energy rated
▲Very rugged
■Kelvin source for easy drive
■Very low stray inductance
▲Symmetrical design
▲M5 power connectors
■High level of integration Benefits
■Outstanding performance at high frequency operation
■Direct mounting to heatsink (isolated package)
■Low junction to case thermal resistance
■Low profile
■RoHS Compliant

Microchip

APTM50DHM38G

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Part#

Asymmetrical-bridge MOSFET Power Module

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Welding converters ]Switched Mode Power Supplies ]Switched Reluctance Motor Drives ]

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Datasheet

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Please see the document for details

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English Chinese Chinese and English Japanese

October, 2012

Rev 5

PTM50DHM38G

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