GreenFET3™ Ultra-Low RDSON Integrated Power Switch Selector Guide
▲Dialog’s GFET3 family of high-performance integrated power switches are designed and optimized for all high-side power rail control applications from 0.25V to 5.5V where the load currents range from 1A to 9A. Using Dialog’s proprietary MOSFET design, all GFET3 integrated power switches achieve ultra-stable RDSON across wide input and supply voltage ranges. Combining Dialog's proprietary MOSFET IP and advanced assembly techniques, these advanced state-of-the-art products are available in ultra-small pcb footprints from 0.56mm² to 4mm² and exhibit low thermal resistances for high-current operation.
▲Compared to discrete FET circuit implementations, Dialog’s GFET3 products combine high-performancen FET or pFET structures, high-current handling capability, charge pumps, as well as multiple protection and control circuits into space-efficient single-and dual-channel products. The combination of all these advanced features directly results in BOM (bill-of-material) component and cost reductions as well as increasing system reliability and reduced board size.
▲All of Dialog’s GFET3 low-voltage integrated power switches are designed and fully characterized over the commercial (0°C to 70°C), extended commercial (-20°C to 70°C), industrial (-40°C to 85°C), or extended industrial (-40°C to 125°C) temperature range. Consistent with generating very low thermal gradients, Dialog integrated power control switches are availablein low thermal resistance, STDFN/STQFN RoHS-compliant packaging or wafer-level chip scale packaging (WLCSP).
▲Key featuresin the GFET3 family of high-performance, integrated power control products include:
■High-performance Low RDSON nFET & pFET MOSFETs
●From as low as 4 mΩ
■Internal Protection Features:
●Built-in Supply Undervoltage Lockout Protection
●Fixed and Capacitor/Resistor-adjustableInrush Current Control
●Fixed and Resistor-adjustableCurrent Limit Protection
●Built-in Short-circuit Current Protection
●Built-in Thermal Shutdown Protection with Auto Restart
●Reverse-current Blocking using Bulk Switch or Back-to-Back FETs
●Reverse-voltage Detection (selected part numbers)
●Fast VOUT Discharge (VOUT Discharge delete options available)
■Active HIGH ON-OFF Control (Active-LOW ON-OFF control available)
■Open-drai
■n FAULTSignaling (selected part numbers)
■Open-drain Power Good Signaling (selected part numbers)
■Wafer-level Chip-scale Packaging (selected part numbers)
■UL2367 Certified (selected part numbers)
Selection catalogue
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