MJE4343 (NPN),MJE4353 (PNP) High-Voltage - High Power Transistors

2021-10-19
●designed for use in high power audio amplifier applications and high voltage switching regulator circuits.
●Features:
■High Collector−Emitter Sustaining Voltage −NPN PNP V-CEO(sus) = 160 Vdc − MJE4343 MJE4353
■High DC Current Gain − @ I-C = 8.0 Adc h-FE = 35 (Typ)
■Low Collector−Emitter Saturation Voltage − V-CE(sat) = 2.0 Vdc (Max) @ I-C = 8.0 Adc
■These are Pb−Free Devices

ON Semiconductor

MJE4343MJE4353MJE4343GMJE4353G

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Part#

High-Voltage - High Power Transistors

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high power audio amplifier applications ]high voltage switching regulator circuits ]

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Datasheet

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Please see the document for details

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SOT−93;TO−247

English Chinese Chinese and English Japanese

May, 2012

Rev. 5

MJE4343/D

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