NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor

2021-10-13
●SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
●Features:
■1.7A, 30 V.
◆R-DS(ON) = 0.125 Ω @ V-GS = 4.5 V
◆R-DS(ON) = 0.085 Ω @ V-GS = 10 V
■Industry standard outline SOT-23 surface mount package using proprietary SuperSOT™-3 design for superior thermal and electrical capabilities.
■High performance trench technology for extremely low R-DS(ON)
■Exceptional on-resistance and maximum DC current capability.
■Compact industry standard SOT-23 surface mount package.

ON Semiconductor

NDS355AN

More

Part#

N-Channel Logic Level Enhancement Mode Field Effect Transistor

More

low voltage applications ]notebook computers ]portable phones ]PCMCIA cards ]other battery powered circuits ]

More

Datasheet

More

More

Please see the document for details

More

More

SuperSOT™-3;SOT-23

English Chinese Chinese and English Japanese

October-2017

Rev. 3

NDS355AN/D

439 KB

- The full preview is over. If you want to read the whole 8 page document,please Sign in/Register -
  • +1 Like
  • Add to Favorites

Recommend

All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.

Contact Us

Email: