GD50FSX65L2S IGBT Module
●Features:
■Low V-CE(sat) Trench IGBT technology
■6μs short circuit capability
■V-CE(sat) with positive temperature coefficient
■Maximum junction temperature 175oC
■Low inductance case
■Fast & soft reverse recovery anti-parallel FWD
■Isolated heatsink using DBC technology
[ Inverter for motor drive ][ AC and DC servo drive amplifier ][ Uninterruptible power supply ] |
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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8/2/2018 |
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221 KB |
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