MAX11008 Dual RF LDMOS Bias Controller with Nonvolatile Memory
The MAX11008 controller biases RF LDMOS power devices found in cellular base stations and other wire-less infrastructure equipment. Each controller includes a high-side current-sense amplifier with programmable gains of 2, 10, and 25 to monitor the LDMOS drain current over a range of 20mA to 5A. The MAX11008 supports up to two external diode-connected transistors to monitor the LDMOS temperatures while an internal temperature sensor measures the local die temperature. A 12-bit successive-approximation register (SAR) analog to-digital converter (ADC) converts the analog signals from the programmable-gain amplifiers (PGAs), external temperature sensors, internal temperature measurement, and two additional auxiliary inputs. The MAX11008 automatically adjusts the LDMOS bias volt ages by applying temperature, AIN, and/or drain current samples to data stored in lookup tables (LUTs).
■The MAX11008 includes two gate-drive channels, each consisting of a 12-bit DAC to generate the positive gate voltage for biasing the LDMOS devices. Each gate drive output supplies up to ±2mA of gate current. The gate-drive amplifier is current-limited to ±25mA and features a fast clamp to AGND.
■The MAX11008 contains 4Kb of on-chip, nonvolatile EEPROM organized as 256 bits x 16 bits to store LUTs and register information. The device operates from either a 4-wire 16MHz SPIM™-/MICROWIRE™-compatible or an I²C-compatible serial interface.
■The MAX11008 operates from a +4.75V to +5.25V analog supply with a typical supply current of 2mA, and a +2.7V to+5.25V digital supply with a typical supply of 3mA.The device is packaged in a 48-pin, 7mm x 7mm, thin QFN package and operates over the extended (-40°C to +85°C) temperature range.
●Features
■On-Chip 4Kb EEPROM for Storing LDMOS Bias Characteristics
■Integrated High-Side Current-Sense PGA with Gain of 2, 10, or 25
■±0.75% Accuracy for Sense Voltage Between +75mV and +1250mV
■Full-Scale Sense Voltage
▲+100mV with a Gain of 25
▲+250mV with a Gain of 10
▲+1250mV with a Gain of 2
■Common-Mode Range, LDMOS Drain Voltage: +5V to +32V
■Adjustable Low-Noise 0 to AV-DD Output Gate Bias Voltage Range
■Fast Clamp to AGND for LDMOS Protection
■12-Bit DAC Control of Gate with Temperature
■Internal Die Temperature Measurement
■2-Channel External Temperature Measurement through Remote Diodes
■Internal 12-Bit ADC Measurement for Temperature, Current, and Voltage Monitoring
■User-Selectable Serial Interface
▲400kHz/1.7MHz/3.4MHz I²C-Compatible Interface
▲16MHz SPI-/MICROWIRE-Compatible Interface
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MAX11008 、 MAX11008BETM+ 、 MAX1153 、 MAX1154 、 MAX1253 、 MAX1254 |
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[ Cellular Base Stations ][ Microwave Radio Links ][ Feed-Forward Power Amps ][ Transmitters ][ Industrial Process Control ] |
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Datasheet |
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Please see the document for details |
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TQFN-EP;QFN;T4877M-1 |
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English Chinese Chinese and English Japanese |
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11/08 |
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Rev 0 |
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19-4371 |
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657 KB |
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