MTB1D6N04RE3 N-Channel Enhancement Mode Power MOSFET
■Low On Resistance
■Simple Drive Requirement
■LowGate Charge
■Fast Switching Characteristic
■RoHS compliant package
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Datasheet |
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Please see the document for details |
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TO-220 |
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English Chinese Chinese and English Japanese |
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2020.11.20 |
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C685E3 |
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425 KB |
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