40V N-Channel MOSFETs PDC40B8AX
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
■Features
● 40V,200A,RDS(ON)=1.6mΩ@VGS = 10V
● Improved dv/dt capability
● Fast switching
● 100% EAS Guaranteed
● Green Device Available
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[ Networking ][ Load Switch ][ LED applications ][ Quick Charger ] |
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Datasheet |
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Please see the document for details |
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PPAK5X6 |
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English Chinese Chinese and English Japanese |
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2021/07/23 |
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Ver.1.02 |
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818 KB |
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