TPM3007S3L 30V 7A P-Channel MOSFET
■ V-DS: -30V;
■ I-D: -7.0A;
■ R-DS(〇N)( at V-GS=-10V): <25 mohm;
■ R-DS(〇N)( at V-GS=-4.5V): <36 mohm.
● General Description:
■ Trench Power LV MOSFET technology;
■ High density cell design for Low R-DS(〇N);
■ High Speed switching.
● Applications:
■ Battery protection;
■ Load switch;
■ Power management.
[ Battery protection ][ Load switch ][ Power management ] |
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Datasheet |
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Please see the document for details |
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SOT23-3L |
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English Chinese Chinese and English Japanese |
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2021/07/28 |
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343 KB |
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