TPM1012X N-Channel 1.8-V(G-S) MOSFET

2021-08-06
● Features:
■ TrenchFET® Power MOSFET: 1.8-V Rated;
■ Gate-Source ESD Protected;
■ High-Side Switching;
■ Low On-Resistance: 0.7Ω;
■ Low Threshold: 0.8 V (typ);
■ Fast Switching Speed: 10 ns;
■ S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
● Applications:
■ Battery protection;
■ Load switch;
■ Power management.

TECH PUBLIC

TPM1012X

More

Part#

MOSFET

More

Battery protection ]Load switch ]Power management ]

More

Datasheet

More

More

Please see the document for details

More

More

SC-89

English Chinese Chinese and English Japanese

2021/07/28

732 KB

- The full preview is over. If you want to read the whole 6 page document,please Sign in/Register -
  • +1 Like
  • Add to Favorites

Recommend

All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.

Contact Us

Email: