TPM1012X N-Channel 1.8-V(G-S) MOSFET
■ TrenchFET® Power MOSFET: 1.8-V Rated;
■ Gate-Source ESD Protected;
■ High-Side Switching;
■ Low On-Resistance: 0.7Ω;
■ Low Threshold: 0.8 V (typ);
■ Fast Switching Speed: 10 ns;
■ S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
● Applications:
■ Battery protection;
■ Load switch;
■ Power management.
[ Battery protection ][ Load switch ][ Power management ] |
|
Datasheet |
|
|
|
Please see the document for details |
|
|
|
|
|
SC-89 |
|
English Chinese Chinese and English Japanese |
|
2021/07/28 |
|
|
|
|
|
732 KB |
- +1 Like
- Add to Favorites
Recommend
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.