Enhancement Mode GaN FETs and ICs Visual Characterization Guide
A detailed description of the EPC enhance-ment mode transistors and integrated circuits physical characteristics is given including the visual criteria all devices must meet before they are released for shipment to customers. This article, used in conjunction with the two companion articles, “Assembling eGaN FETs”1, and “EPC GaN Transistor Parametric Characterization Guide”2, gives the user a set of tools to devel-op circuits and systems that take advantage of the enhancement mode GaN FET’s and IC’s advanced form factor and consequent unprecedented performance potential.
In June 2009 Effcient Power Conversion Corporation (EPC) introduced the first enhancement mode gallium nitride on silicon power transistors designed specifically as power MOSFET replacements. These products were developed to be produced in high volume at low cost using standard silicon manufacturing technology and facilities.
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User's Guide |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2017/06/16 |
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AN010 |
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2.1 MB |
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