Development Board EPC9014 Quick Start Guide
The EPC9014 development board is a 200 V maximum device voltage, 4 A maximum output cur-rent, half bridge with onboard gate drives, featuring the EPC2019 enhancement mode (eGaN®) field effect transistor (FET). The purpose of this development board is to simplify the evaluation process of the EPC2019 eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.
The EPC9014 development board is 2” x 1.5” and contains not only two EPC2019 eGaN FET in a half bridge configuration with gate drivers, but also an on board gate drive supply and bypass ca-pacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency cal-culation. A complete block diagram of the circuit is given in Figure 1.
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User's Guide |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2017/06/17 |
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612 KB |
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