Development Board EPC9001 Quick Start Guide
The EPC9001 development board is a 40 V maximum device volt-age, 15 A maximum output current, half bridge with onboard gate drives, featuring the EPC2015 enhancement mode (eGaN®) field effect transistor (FET). The purpose of this development board is to simplify the evaluation process of the EPC2015 eGaN FET by in-cluding all the critical components on a single board that can be easily connected into any existing converter.
The EPC9001 development board is 2” x 1.5” and contains not only two EPC2015 eGaN FET in a half bridge configuration using the Texas Instruments LM5113 gate driver, supply and bypass ca-pacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficien-cy calculation. A complete block diagram of the circuit is given in Figure 1.
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User's Guide |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2017/06/17 |
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Rev 5.0 |
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2.3 MB |
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