EPC2100 – Enhancement Mode GaN Power Transistor Half Bridge Preliminary Specification Sheet
●EPC2100 devices are supplied only in passivated die form with solder bars
●Die Size: 6.05 mm x 2.3 mm
●Features:
■90% System Efficiency at 25 A
▲12 VIN to 1.2VOUT, 500 kHz
▲Includes output filter
■High Frequency Operation (Beyond 10 MHz)
■High Density Footprint
■Low Inductance Package
■Pb-Free (RoHS Compliant), Halogen Free
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[ High Frequency DC-DC Conversion ][ Point-of-Load (POL) Converters ] |
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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January, 2017 |
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1.1 MB |
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