Demonstration Board EPC9022/23/24/25/27/28/29/30 Quick Start Guide
The development board is in a half bridge topology with onboard gate drives, featuring the EPC8000 family of high frequency en-hancement mode (eGaN®) field effect transistors (FETs). The pur-pose of these development boards is to simplify the evaluation process of the EPC8000 family of eGaN FETs by including all the critical components on a single board that can be easily connected into any existing converter.
The development board is 2” x 1.5” and contains two eGaN FETs in a half bridge configuration using the Texas Instruments LM5113 gate driver, supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform mea-surement and efficiency calculation. A complete block diagram of the circuit is given in Figure 1.
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User's Guide |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2017/06/17 |
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2.4 MB |
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