HMS8N50K 500V N-Channel MOSFET
●This Power MOSFET is produced using H&M Semi's Advanced Super-Junction technology.
●This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
●These devices are well suited for AC/DC power conversion in switching mode operation for higher efficiency.
■Features
●7.6A, 500V, R-DS(on) typ.= 0.5Ω@V-GS= 10 V
●Low gate charge ( typical 25nC)
●High ruggedness
●Fast switching
●100% avalanche tested
●Improved dv/dt capability
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Please see the document for details |
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D-PAK;I-PAK |
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English Chinese Chinese and English Japanese |
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2021/03/01 |
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930 KB |
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