HM4640D N and P-Channel Enhancement Mode Power MOSFET
The HM4640D uses advanced trench technology to provide excellent RDS(ON) and low gate charge The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
■General Features
● N-Channel
◆VDS = 40V,I-D =5A
◆RDS(ON)< 41mΩ @ VGS=4 5V
◆RDS(ON)< 68mΩ @ VGS=2 5V
● P-Channel
◆VDS = -40V.I-D = -5A
◆RDS(ON)< 80mΩ @ VGS=-4.5V
◆RDS(ON)< 135mΩ @ VGS=-2.5V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
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Datasheet |
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Please see the document for details |
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DFN2X2-6L |
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English Chinese Chinese and English Japanese |
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2021/03/01 |
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1.2 MB |
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