HM2809D P-Channel 60V(D-S)

PublishTime：2021-07-14

●GENERAL DESCRIPTION
■The HM2809D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
●FEATURES
■R-DS(ON)≦188mΩ@V-GS=-10V
■R-DS(ON)≦266mΩ@V-GS=-4.5V
■Super high density cell design for extremely low R-DS(ON)
■Exceptional on-resistance and maximum DC current capability
■Capable doing Cu wire bonding

Brand of Product：	H&M SEMI
Part#：	HM2809D More Part#
Product Category：	P-Channel logic enhancement mode power field effect transistors More
Application：	[ Power Management ][ Portable Equipment ][ Battery Powered System ][ Load Switch ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	DFN;DFN2X2-6L
Language：	English Chinese Chinese and English Japanese
Date of Creation：	2021/03/01
Version Number：
Data Encoding：
Data Size：	1.6 MB

Data section preview(2pages)

- The full preview is over. If you want to read the whole 5 page document,please Sign in/Register -

Download

+1 Like
Add to Favorites

Recommend

Technical Resources

More>

All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.

Integrated Circuits