HM50P03 P-Channel Enhancement Mode Power MOSFET

2021-07-09
■Description
●The HM50P03uses advanced trench technology to provide excellent RDS, low gate charge and operation with gate voltages as low as 4.5V.
■General Features
● VDS=-30V,I-D =-50A
◆RDS(ON)<17mΩ @ VGS=-4.5V
◆RDS(ON)<10mΩ @ VGS=-10V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package

H&M SEMI

HM50P03

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Part#

P-Channel MOSFET

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Battery Switch ]Load switch ]Power management ]

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Datasheet

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Please see the document for details

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TO-220-3L

English Chinese Chinese and English Japanese

Sep.2010

1.2 MB

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