Recommendations for Reliable Switching Performance using ON Semiconductor 40 Vand 80 V Automotive Power Modules Using Shielded-Gate MOSFETs

2021-07-07
The ON Semiconductor automotive qualified power module family(AutoSPM) was introduced in 2008 and since then has experienced steady improvements, including most recently shielded−gate MOSFETs in the 40 V and 80 V nodes. These MOSFETs further optimize the figure of merit between on resistance RDS(on) and gate charge Qg, and thus extends the modules' capability for high frequency and high current switching. This application note providesre commendations on the selection of gate resistors and limits to the dclink bus inductance necessary to obtain the full benefit of this newMOSFET technology while maintaining safe operation inhard−switched inverter system designs.

ON Semiconductor

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Automotive Power Modules Using Shielded-Gate MOSFETs

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Application note & Design Guide

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English Chinese Chinese and English Japanese

January, 2020

Rev. 0

AND90006/D

1.3 MB

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