HM100N02K Data sheet
■The HM100N02K uses advanced trench technology and design to provide excellent R-DS(ON) with low gate charge. It can be used in a wide variety of applications.
●General Features
■V-DS =20V,I-D =100A
▲R-DS(ON) <5.5mΩ @ V-GS=4.5V
■High density cell design for ultra low Rdson
■Fully characterized avalanche voltage and current
■Good stability and uniformity with high E-AS
■Excellent package for good heat dissipation
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[ Load switching ][ Hard switched and high frequency circuits ][ Uninterruptible power supply ] |
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Datasheet |
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Please see the document for details |
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TO-252-2L |
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English Chinese Chinese and English Japanese |
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2021/03/01 |
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544 KB |
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