PPI Switching Devices for HVDC Systems Technical Review
●Toshiba Electronic Devices & Storage Corporation has developed and released a line of injection enhanced gate transistors (IEGTs) known as press-pack IEGTs (PPIs) as switching devices for HVDC systems. These PPIs incorporate the following features: (1) an 18% reduction in energy loss through the introduction of a new trench structure, (2) an improved short-circuit failure mode (SCFM) allowing 50 hours of continuous current driving in the event of device failure, and (3) high rupture resistance through the application of a new package that achieves 1.7 times the rupture resistance of conventional packages.
●Introduction
■Semiconductor devices in the field of power electronics (hereinafter referred to as power devices) convert direct current to alternating current, alternating current to direct current, and control voltage, current, and frequency. Power devices are used in various fields ranging from renewable power generation, such as wind or solar systems, to utilization of electricity in familiar settings, including for railroads, automobiles, industrial machinery, home electric appliances and other applications . Toshiba Electronic Devices & Storage Corporation focuses on the development of high-power devices, which are key components for power conversion, and contributes to the efficient and stable usage of electric power through all phases of power generation, transmission, distribution, and consumption.
■In order to manage power from generation to utilization, high efficiency and high reliability are also required. In particular, high-voltage direct current (HVDC) has attracted attention in recent years as a method suitable for large-capacity, long-distance power transmission, and has been put into practical use around the world. Compared with traditional high-voltage alternating current (AC) transmission, HVDC achieves higher transmission efficiency, the greater the distance the higher the efficiency, as well as savings in construction costs. In conventional HVDC systems, line-commutated converters (LCCs) that employ thyristors are commonly used. However, LCCs require supplementary equipment such as power compensators and harmonic filters, and the installation area required is an issue.
■On the other hand, voltage source converters (VSCs) enable the control of active and reactive power independently. Since VSCs require power devices capable of turning themselves off, injection-enhanced gate transistors (IEGTs) are attracting attention as the devices most suited to HVDC transmission.
■We have adopted the press pack IEGT (PPI), which is a suitable power device for a VSC thanks to its large cooling capacity achieved by double-sided cooling and the environmental resistance achieved by its hermetic sealing. Furthermore, we have improved the explosion resistance, continuous operating capability, and low energy loss for HVDC systems.
■We describe the main points below.
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Supplier and Product Introduction |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2020/04/05 |
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Vol.3 |
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818 KB |
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