AN90016 Maximum continuous currents in NEXPERIA LFPAK power MOSFETs
■Keywords: LFPAK, MOSFET, ID, IS, continuous current.
■Abstract: This application note examines the factors that determine the maximum permissible current ratings for LFPAK (copper-clip package) MOSFETs.
●Introduction:
Modern electronics using low-voltage (<100 V) MOSFETs has seen an increase in high-power demand in both automotive and industrial applications. Power output in kilowatt terms for applications such as motor drive is now a very common requirement. Combined with the existing space constraint in modules this means that the need to handle more power is being passed on to the components, particularly MOSFETs.
The current limit given in data sheets for power MOSFETs is one of the most important parameters in such high-power applications where the handling of very high currents is required.
As the MOSFET is a three terminal device – Gate, Source and Drain – current can flow through any of these terminals as IG, IS and ID respectively. Only maximum continuous current ID (drain-source) and continuous current IS (source-drain/body diode) will be considered. Leakage currents (IGSS, IDSS) and pulsed currents such as IDM are not in the scope of this document.
This application note gives a comprehensive insight into the methodology in determining the maximum continuous current rating of NEXPERIA power MOSFETs.
It is critical to fully understand the capabilities, the boundaries and the relevant environmental conditions so that electronics engineers and designers select the right MOSFET for the right application - all of which will be discussed and addressed in this document.
[ automotive ][ industrial ] |
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Application note & Design Guide |
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Please see the document for details |
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LFPAK;LFPAK88;D2PAK |
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English Chinese Chinese and English Japanese |
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3 September 2020 |
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Rev. 1.1 |
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AN90016 |
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1.2 MB |
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