AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating
■Keywords: power MOSFET, single-shot, avalanche, ruggedness, safe operating condition.
■Abstract: Power MOSFETs are normally measured based on single-shot Unclamped Inductive Switching (UIS) avalanche energy. This application note describes in detail, the avalanche ruggedness performance, fundamentals of UIS operation and appropriate quantification method for the safe operating condition.
●Introduction:
Electronic applications have progressed significantly in recent years and have inevitably increased the demand for an intrinsically rugged power MOSFET. Device ruggedness defines the capacity of a device to sustain an avalanche current during an unclamped inductive load switching event.The avalanche ruggedness performance of a power MOSFET is normally measured as a single-shot Unclamped Inductive Switching (UIS) avalanche energy or EDS(AL)S. It provides an easy and quick method of quantifying the robustness of a MOSFET in avalanche mode. However, it does not necessarily reflect the true device avalanche capability in an application.
This application note explains the fundamentals of UIS operation. It reviews the appropriate method of quantifying the safe operating condition for a power MOSFET, subjected to UIS operating condition. The application note also covers the discussions on repetitive avalanche ruggedness capability and how this operation can be quantified to operate safely.
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Application note & Design Guide |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2 July 2020 |
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Rev. 4.0 |
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AN10273 |
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247 KB |
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