MJD31C 100 V, 3 A NPN high power bipolar transistor
NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package.
PNP complement: MJD32C.
●Features and benefits:
■High thermal power dissipation capability
■High energy efficiency due to less heat generation
■Electrically similar to popular MJD31 series
■Low collector emitter saturation voltage
■Fast switching speeds
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[ Power management ][ Load switch ][ Linear mode voltage regulator ][ Constant current drive backlighting application ][ Motor drive ][ Relay replacement ] |
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Datasheet |
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Please see the document for details |
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DPAK;TO-252;SOT428C;SC-63 |
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English Chinese Chinese and English Japanese |
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16 September 2020 |
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v.5 |
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MJD31C v.5 |
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225 KB |
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