FFSP20120A: SiC Diode, 1200V, 20A, TO-220-2

PublishTime：2021-06-28

●Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher
reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal
performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster
operating frequency, increased power density, reduced EMI, and reduced system size and cost.
●Features
■Max Junction Temperature 175°C
■Avalanche Rated 200 mJ
■High Surge Current Capacity
■Positive Temperature Coefficient
■Ease of Paralleling
■No Reverse Recovery / No Forward Recover

Brand of Product：	ON Semiconductor
Part#：	FFSP20120A More Part#
Product Category：	SiC Diode More
Application：	More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	TO-220-2
Language：	English Chinese Chinese and English Japanese
Date of Creation：	5/18/2021
Version Number：
Data Encoding：
Data Size：	151 KB

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