MMBT5550 / MMBT5551 High Voltage Transistors NPN Silicon
■High collector-emitterbreakdien voltage.(BV-CEO= 140V~ 160V@I-C =1mA)
■This device is designed for general purpose high voltage amplifiers and gas discharge display driving
■Epitaxial planar die construction.
■Lead-free parts for green partner, exceeds environmental standards of MIL-STD-19500 /228
■Suffix "-H" indicates Halogen-free part, ex. MMBT5550-H
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[ high voltage amplifiers ][ gas discharge display driving ] |
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Datasheet |
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Please see the document for details |
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SOT-23 |
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English Chinese Chinese and English Japanese |
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2012/05/16 |
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Revision D |
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AS-3140018 |
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1.1 MB |
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