VEMT2500X01, VEMT2520X01 Silicon NPN Phototransistor
●FEATURES
■Package type: surface mount
■Package form: GW, RGW
■Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8
■AEC-Q101 qualified
■High radiant sensitivity
■Suitable for visible and near infrared radiation
■Fast response times
■Angle of half sensitivity: φ = ± 15°
■Package matched with IR emitter series VSMB2000X01
■Floor life: 4 weeks, MSL 2a, acc. J-STD-020
■Lead (Pb)-free reflow soldering
■Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
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Silicon NPN Phototransistor 、 silicon NPN epitaxial planar phototransistors |
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[ Detector ][ automotive applications ][ Photo interrupters ][ Miniature switches ][ Counters ][ Encoders ][ Position sensors ] |
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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24-Aug-11 |
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Rev. 1.2 |
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81134 |
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141 KB |
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