SiC SBD P6D12002E2 1200V SiC Schottky Diode

2023-12-05

■Features
●Ultra-Fast Switching
●Zero Reverse Recovery Current
●High-Frequency Operation
●Positive Temperature Coefficient on V-F
●High Surge Current
●100% UIS tested
■Standards Benefits
●Improve System Efficiency
●Reduction of Heat Sink Requirement
●Essentially No Switching Losses
●Parallel Devices Without Thermal Runaway

PN Junction

P6D12002E2

More

Part#

SiC Schottky DiodeSiC SBD

More

Consumer SMPS ]AC/DC Converters ]

More

Datasheet

More

More

Please see the document for details

More

More

TO-252-2

English Chinese Chinese and English Japanese

Apr. 2021

Ver. 1.1

644 KB

- The full preview is over. If you want to read the whole 6 page document,please Sign in/Register -
  • +1 Like
  • Add to Favorites

Recommend

All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.

Contact Us

Email: