FFSP1065A Silicon Carbide Schottky Diode

PublishTime：2021-06-09

●Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
●Features:
■ Max Junction Temperature 175 °C
■ Avalanche Rated 64 mJ
■ High Surge Current Capacity
■ Positive Temperature Coefficient
■ Ease of Paralleling
■ No Reverse Recovery/No Forward Recovery
■ This Device is Pb−Free, Halogen Free/BFR Free and RoHS Compliant

Brand of Product：	ON Semiconductor
Part#：	FFSP1065A More Part#
Product Category：	Silicon Carbide Schottky Diode More
Application：	[ Purpose ][ SMPS ][ Solar Inverter ][ UPS ][ Power Switching Circuits ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	TO−220−2LD
Language：	English Chinese Chinese and English Japanese
Date of Creation：	January, 2020
Version Number：	Rev. 2
Data Encoding：	FFSP1065A/D
Data Size：	295 KB

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