TPD1032F Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
●Features
■Two built-in power IC chips with a new structure combining a control block and a vertical power MOSFET (L²-π-MOS) on each chip.
■Can directly drive a power load from a CMOS or TTL logic.
■Built-in protection circuits against overvoltage (active clamp), overtemperature (thermal shutdown), and overcurrent (current limiter).
■Low Drain-Source ON-resistance: R-DS (ON)= 0.4 Ω (max) (@V-IN= 5 V, I-D= 1 A, T-ch= 25°C)
■Low Leakage Current: I-DSS= 10 μA (max) (@V-IN= 0 V, V-DS= 20 V, Tch= 25°C)
■Low Input Current: I-IN= 300 μA (max) (@V-IN= 5 V, T-ch= -40~110°C)
■8-pin SOP package for surface with embossed-tape packing.
Intelligent Power Device 、 Silicon Monolithic Power MOS Integrated Circuit 、 2-IN-1 Low-Side Power Switch |
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[ Motor ][ Solenoid ][ Lamp Drive ] |
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Datasheet |
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Please see the document for details |
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SOP;SOP8-P-1.27A |
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English Chinese Chinese and English Japanese |
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2013-12-26 |
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214 KB |
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