Si8900EDB Bi-Directional N-Channel 20-V (D-S) MOSFET
■TrenchFET® Power MOSFET
■Ultra-Low R-SS(on)
■ESD Protected: 4000 V
■MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and On-Resistance Per Footprint Area
Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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08-Sep-08 |
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Rev. G |
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71830 |
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94 KB |
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