EPC2007C – Enhancement Mode Power Transistor eGaN® FET DATASHEET

PublishTime：2021-05-21

Gallium Nitride’s exceptionally high electron mobility and low temperature coefcient allows very low R_DS(on), while its lateral device structure and majority carrier diode provide exceptionally low Q_G and zero Q_RR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are benefcial as well as those where on-state losses dominate.
● Benefts:
■ Ultra High Efciency
■ Zero Q_RR
■ Ultra Low Q_G
■ Ultra Small Footprint

Brand of Product：	EPC
Part#：	EPC2007C More Part#
Product Category：	Enhancement Mode Power Transistor 、 eGaN® FET More
Application：	[ High Speed DC-DC conversion ][ Class-D Audio ][ Wireless Power Transfer ][ Lidar ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：
Language：	English Chinese Chinese and English Japanese
Date of Creation：	April, 2021
Version Number：
Data Encoding：
Data Size：	1 MB

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