IX4351NE 9A Low Side SiC MOSFET & IGBT Driver
■The IX4351NE gate driver is designed specifically to drive SiC MOSFETs and high power IGBTs. Separate 9A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses. An internal negative charge regulator provides a selectable negative gate drive bias for improved dV/dt immunity and faster turn-off.
■Desaturation detection circuitry senses an over current condition of the SiC MOSFET and initiates a soft turn off, thus preventing a potentially damaging dV/dt event. The non-inverting logic input, IN, is TTL and CMOS compatible; internal level shifters provide the necessary bias to accommodate negative gate drive bias voltages. Additional protection features include UVLO detection and thermal shutdown. An open drain FAULT output signals a fault condition to the microcontroller.
■The IX4351NE is available in a thermally enhanced 16-pin narrow SOIC package.
●Features:
■Separate 9A peak source and sink outputs
■Operating Voltage Range: -10V to +25V
■Internal charge pump regulator for selectable negative gate drive bias
■Desaturation detection with soft shutdown sink driver
■TTL and CMOS compatible input
■Under Voltage lockout (UVLO)
■Thermal shutdown
■Open drain FAULT output
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[ On-board chargers ][ DC-DC converters ][ Electric vehicle charging stations ][ Motor controllers ][ Power inverters ] |
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Datasheet |
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Please see the document for details |
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SOIC |
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English Chinese Chinese and English Japanese |
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4/30/2021 |
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R03 |
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DS-IX4351NE-R03 |
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644 KB |
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