CJMP2011 DFNWB2×2-6L-J Plastic-Encapsulate MOSFETS

PublishTime：2021-04-21

The CJMP2011 uses advanced trench technology to provide excellent R_DS(on) , low gate charge and operation with low gate voltage.This device is suitable for use as a load switching application and a wide variety of other applications.
● FEATURES:
■ Advanced trench MOSFET process technology
■ Ultra low on-resistance with low gate charge

Brand of Product：	JSCJ
Part#：	CJMP2011 、 P2011 More Part#
Product Category：	Plastic-Encapsulate MOSFETS 、 P-Channel Power MOSFET More
Application：	[ PWM application ][ Load switch ][ Battery charge in cellular handset ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	DFNWB2×2-6L-J
Language：	English Chinese Chinese and English Japanese
Date of Creation：	2021/03/24
Version Number：	Rev. -2.1
Data Encoding：
Data Size：	1.3 MB

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