CJP50N06 TO-220-3L Plastic-Encapsulate MOSFETS

2021-04-21
The CJP50N06 uses advanced trench technology and design to provide excellent R_DS(ON) with low gate charge. It can be used in a wide variety of applications.
● FEATURE:
■ High density cell design for ultra low Rdson
■ Fully characterized avalanche voltage and current
■ Good stability and uniformity with high E_AS
■ Excellent package for good heat dissipation
■ Special process technology for high ESD capability

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CJP50N06P50N06

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Part#

Plastic-Encapsulate MOSFETSN-Channel Power MOSFET

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Power switching application ]Hard switched ]high frequency circuits ]Uninterruptible power supplyD ]

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Datasheet

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Please see the document for details

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TO-220-3L

English Chinese Chinese and English Japanese

2021/03/24

Rev. - 1.1

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