UF3SC120040B7S 1200V-35mΩ SiC FET DATASHEET
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the D²PAK-7L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads , and any application requiring standard gate drive.
●Features:
■On-resistance R-DS(on):35mΩ (typ)
■Operating temperature: 175℃ (max)
■Excellent reverse recovery: Q-rr = 358nC
■Low body diode V-FSD: 1.5V
■Low gate charge: Q-G = 43nC
■Threshold voltage V-G(th): 5V (typ) allowing 0 to 15V drive
■Package creepage and clearance distance > 6.1mm
■Kelvin source pin for optimized switching performance
■ESD protected, HBM class 2
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[ Telecom ][ Server Power ][ Industrial power supplies ][ Power factor correction modules ][ Motor drives ][ Induction heating ] |
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Datasheet |
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Please see the document for details |
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D²PAK-7L |
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English Chinese Chinese and English Japanese |
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December 2020 |
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Rev. A |
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837 KB |
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