How2AppNote 020 How to Design a Bi-Directional 1/16th Brick 48 V-12 V Converter Using Monolithic GaN ePower™ Stage
This application note discusses the design of a digitally controlled bi-directional 1/16ᵗʰ brick converter using the integrated GaN power stage for 48 V-to-12 V application, with up to 300 W output power, and peak efficiency of 95%.
The standard dimension of the 1/16ᵗʰ brick converter is 33 x 22.9 mm (1.3 x 0.9 inch). The height limit for this design is set to 10 mm (0.4 inch).
Monolithic GaN ePower™ stage:
The monolithic integration of GaN FETs and gate drivers offers improved performance and simplified board layout. It also reduces parasitic inductance and capacitances, and related losses.
Figure 1 (a) shows a simplified block diagram of the EPC2152 GaN ePower™ Stage [1]. The main power FETs are controlled by the integrated gate drivers. The IC also includes input buffers that accept logic levels from 3.3 V to 5 V. Other standard features are also included, such as power-on-reset (POR) and under-voltage-lockout (UVLO) functions, a high voltage signal level-shifter and a synchronous bootstrap FET [2]. A photo of the monolithic GaN power stage is shown in Figure 1 (b). Both power GaN FETs are 80 V rated, with 10 mΩ on-resistance.
Design of the Bi-directional DC-DC converter:
One of the key challenges in designing a high power 1/16ᵗʰ brick is the limited space. The integrated EPC2152 requires an area of just 18 mm2, leaving room for adequate decoupling capacitors that help achieve high efficiency.
A simplified schematic of the EPC9151 bi-directional capable 1/16ᵗʰ brick DC-DC converter is shown in Figure 2. It includes a two-phase synchronous buck power stage, a digital controller, current sensors and housekeeping power supply. A two-phase approach is selected so that the peak current requirement is reduced, and smaller magnetics can be used.
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Application note & Design Guide |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2020/12/16 |
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020 |
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1.3 MB |
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