NCEP023N10, NCEP023N10D NCE N-Channel Super Trench II Power MOSFET
The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R-DS(ON) and Q-g. This device is ideal for high-frequency switching and synchronous rectification.
■General Features
●V-DS =100V,I-D =240A
▲R-DS(ON)=1.65mΩ , typical (TO-220)@ V-GS=10V
▲R-DS(ON)=1.45mΩ , typical (TO-263)@ V-GS=10V
●Excellent gate charge x R-DS(on) product(FOM)
●Very low on-resistance R-DS(on)
●175 °C operating temperature
●Pb-free lead plating
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Datasheet |
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Please see the document for details |
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TO-220;TO-263 |
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English Chinese Chinese and English Japanese |
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2020/03/24 |
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V1.0 |
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708 KB |
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