CMPA2735015S 15 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier
Cree's CMPA2735015S is a gallium nitride (GaN)High Electron Mobility Transistor (HEMT)based monolithic microwave integrated circuit(MMIC).GaN has superior properties compared to silicon or gallium arsenide,including higher breakdown voltage,higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors.This MMIC contains a two-stage reactively matched amplifier design approach enabling high power and power added efficiency to be achieved in a 5mm x 5mm,surface mount (QFN package).
◆Features
■33 dB Small Signal Gain
■21 W Typical PSAT
■Operation up to 50 V
■High Breakdown Voltage
■High Temperature Operation
■5 mm x 5 mm Total Product Size
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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December 2019 |
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Rev 0.3 |
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1019 KB |
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