MSCSM120DAM11CT3AG Boost Chopper SiC MOSFET Power Module
●Product Overview
■The MSCSM120DAM11CT3AG device is a boost chopper 1200 V/254 A full Silicon Carbide (SiC) power module.
●Features
■The following are key features of the MSCSM120DAM11CT3AG device:
▲SiC Power MOSFET
◆High speed switching
◆Low RDS(on)
◆Ultra low loss
▲SiC Schottky Diode
◆Zero reverse recovery
◆Zero forward recovery
◆Temperature Independent switching behavior
◆Positive temperature coefficient on VF
▲Low stray inductance
▲Kelvin source for easy drive
▲Internal thermistor for temperature monitoring
▲Aluminum nitride (AIN) substrate for improved thermal performance
●Benefits
■The following are benefits of the M$C$M120DAM11CT3AG device:
▲High efficiency converter
▲Outstanding performance at high frequency operation
▲Direct mounting to heatsink (isolated package)
▲Low junction-to-case thermal resistance
▲Solderable terminals for power and signal, for easy PCB mounting
▲Low profile
▲RoHS compliant
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Boost Chopper SiC MOSFET Power Module 、 Silicon Carbide (SiC) power module |
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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January2020 |
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Revision1.0 |
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MSCC-0344-DS-01058-1.0-0120 |
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1.4 MB |
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