1200V CoolSiC™ & Direct Drive Technology The green revolution is taking place
Technology, represents Infineon’s leading edge solution to bring actual designs towards new and so
far unattainable efficiency levels. The new CoolSiC™ consistently reduces the switching losses with
respect to the available IGBT based silicon devices and even the conduction losses when its ohmic
characteristics are fully exploited. Utmost efficiency at highest power density levels can be reached
also thanks to Infineon CoolSiC™ monolithically integrated body diode, showing a switching
performance comparable with that of an external SiC Schottky barrier diode. The Infineon CoolSiC™,
with its ultrafast body diode and dedicated Driver IC, represents the best solution for solar, UPS and
industrial drives applications by combining best performance, reliability, safety and ease of use
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IJW120R070T1 、 1EDI30J12CL/CP 、 BSC030P03NS3 、 IJW120R100T1 、 BSC030P03NS3 G 、 IJC120R070T1 、 IPC099P03N 、 IJC120R100T1 |
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Supplier and Product Introduction |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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11/2012 |
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B152-H9713-G1-X-7600-DB2012-0004 |
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879 KB |
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