SSPL5508
◆Description:
■These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
◆Features and Benefits:
■Advanced Process Technology
■Special designed for PWM, load switching and general purpose applications
■Ultra low on-resistance with low gate charge
■Fast switching and reverse body recovery
■175°C operating temperature
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Datasheet |
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Please see the document for details |
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TO-220 |
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English Chinese Chinese and English Japanese |
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2014.02.11 |
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Version : 1.2 |
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721 KB |
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