2N7002KG8
●Description:
■It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications
●Features and Benefits:
■Advanced trench MOSFET process technology
■Special designed for PWM , load switching and general purpose applications
■UItra low on-resistance with low gate charge
■Fast switching and reverse body recovery
■150℃ operating temperature
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Datasheet |
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Please see the document for details |
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SOT-363 |
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English Chinese Chinese and English Japanese |
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2011.07.17 |
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Version:1.1 |
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584 KB |
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