SSF4N60
◆Description
■The SSF4N60 is a new generation of high voltage N–Channel enhancement mode power MOSFETs and is obtained through an extreme optimization layout design,in additional to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability,provide superior switching performance, withstand high energy pulse in the avalanche, and increases packing density.
◆Features
■Extremely high dv/dt capability
■Low Gate Charge Qg results in Simple Drive Requirement
■100% avalanche tested
■Gate charge minimized
■Very low intrinsic capacitances
■Very good manufacturing repeatability
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[ off-line power supply ][ adaptor ][ PFC ] |
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Datasheet |
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Please see the document for details |
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SSF4N60;TOP;TO220 |
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English Chinese Chinese and English Japanese |
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2009.11.10 |
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Version:1.0 |
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787 KB |
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