SSF10N90F1 MainProductCharacteristics
●Description:
■It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
●Features and Benefits:
■Advanced MOSFET process technology
■Low On Resistance
■Low Gate Charge
■Fast switching and reverse body recovery
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Datasheet |
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Please see the document for details |
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TO-3P |
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English Chinese Chinese and English Japanese |
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2015.01.23 |
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Version:1.0 |
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430 KB |
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