SSF1030B
◆Description:
■The SSF1030B is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF1030B is assembled in high reliability and qualified assembly house.
◆Feathers:
■Advanced trench process technology
■Ultra low Rdson, typical 25mohm
■High avalanche energy, 100% test
■Fully characterized avalanche voltage and current
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middle voltage high current N–Channel enhancement mode trench power MOSFET |
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Datasheet |
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Please see the document for details |
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SOP-8 |
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English Chinese Chinese and English Japanese |
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2011.2.23 |
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Version:1.1 |
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505 KB |
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