G28V3 GaN on SiC 0.4μm MMIC Foundry Process Enabling 28 V RF Designs through C-Band
▲PROCESS DESCRIPTION
●Wolfspeed's G28V3 is a high performance 28 V mm-wave process targeting applications operating at frequencies from DC through 8 GHz.The process has been fully qualified with the qualification report available upon request.The process is well suited for high performance applications where high-power,high efficiency,or wide bandwidth are required.
●The process features two gold RF interconnect layers,MMIC capacitors,thin film and bulk GaN resistors,and dielectrically supported bridges for connections to circuit elements such as capacitors and inductors.The SiC substrate thickness is 100 microns and has the smallest substrate via sizes available in a GaN on SiC MMIC process,which enables very compact FET footprint for high frequency applications.Process Design Kits(PDKs)with scalable,accurate models of the G28V3 devices are available for Microwave Office(MWO)or Advanced Design System (ADS)simulators.The PDKs have been vetted for both small signal and large signal accuracy.Model validation reports are available upon request.
●The G28V3 process is offered through Wolfspeed's foundry services using either dedicated or shared wafer runs.
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[ Satcom ][ RADAR ][ Telecom ][ Point-to-Point Radio ][ Ultra-wide band EW ][ ECM ] |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2020/01/22 |
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